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R09DS0029EJ0100
Rev.1.00
Oct
18,
2011
Data
Sheet
NE3520S03
N-Channel
GaAs
HJ-FET,
K
Band
Low
Noise
and
High-Gain
FEATURES
?
Low
noise
figure
and
high
associated
gain:
NF
=
0.65
dB
TYP.,
Ga
=
13.5
dB
TYP.
@
f
=
20
GHz,
VDS
=
2
V,
ID
=
10
mA
?
K
band
Micro-X
plastic
(
S03)
pa
ckage
APPLICATIONS
?
20
GHz
band
DBS LNB
?
Other
K
band
communication
s
ystem
ORDERING INFORMATION
Part
Number
Order
Number
Package
Quantity
Marking
Supplying
Form
NE3520S03-T1C
NE3520S03-T1C-A
2
kpcs/reel
NE3520S03-T1D
NE3520S03-T1D-A
S03
package
(Pb-Free)
10
kpcs/reel
J
?
Embossed
tape
8
mm
wide
?
Pin
4
(Gate)
face
the
perforation
side
of the
tape
Remark
To
order
evaluation
samples,
please
contact
your
nearby
sales
office.
Part
number
for
sample
order:
NE3520S03-A
ABSOLUTE
MAXIMUM
RATINGS
(TA
=
+25°C,
unless
otherwise
specified)
Parameter
Symbol
Ratings
Unit
Drain
to
Source
Voltage
VDS
4.0
V
Gate
to
Source
Voltage
VGS
–3.0
V
ID
Drain
Current
IDSS
mA
IG
Gate
Current
100
μA
Total
Power
DissipationNote
Ptot
165
mW
Channel
Temperature
Tch
+125
°C
Storage
Temperature
Tstg
–65
to
+
125
°C
Note:
Mounted
on
1.08
cm2
×
1.0
mm
(t)
glass
epoxy
PWB
CAUTION
Observe
precautions
when
handling
because
these
devices
are
sensitive
to
electrostatic
discharge.
R09DS0029EJ0100
Rev.1.00
Oct
18,
2011
A Business Partner
o
f
Renesas Electronics Corporation.
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